ST’s Power MOSFETs enable smaller, greener automotive power supplies

STMicroelectronics has introduced a new range of high-voltage N-channel Power MOSFETs for automotive applications. These devices are built using ST’s MDmesh DM2 super-junction technology with fast-recovery diode. The devices feature a breakdown voltage over the 400 to 650V range and are housed in D2PAK, TO-220, and TO-247 packages.

The 400 and 500V devices are said to be the industry's first AEC-Q101-qualified devices at these breakdown voltages, while the 600 and 650V devices are claimed to offer higher performance than competitive products. All of these devices are tailored for automotive applications that require an integrated fast body diode, softer commutation behaviour, and back-to-back gate-source zener protection. They are ideal for full-bridge zero-voltage-switching topologies.

ST’s Power MOSFETs are claimed to offer the best performance in both reverse recovery charge and time as well as softness factor in the automotive market, while they are also among the best in turn-off energy at high currents, improving efficiency of automotive power supplies. They also feature a 20% lower RDS(on) compared to the previous generation.

In addition, their fast body-diode performance reduces EMI issues, allowing the use of smaller passive-filtering components. In this way, MDmesh DM2 technology enables ‘greener’ power design by reducing wasted energy, maximising the efficiency, and minimising the form factor of the end products.