STripFET F7 MOSFETs are claimed to combine improved conduction efficiency and switching performance with a simplified trench-gate structure, which allows low on-resistance, capacitance, and gate charge with a superior figure of merit. In addition, the intrinsic body diode has low recovery charge, which contributes to faster switching. The device’s ruggedness ensures robust performance under harsh electrical conditions and the low ratio of reverse-transfer capacitance to input capacitance is said to increase EMI immunity.
The MOSFETs are tailored for synchronous rectification and allow fewer parallel devices for the desired maximum current, which helps increase power density and lower the component count. The range comprises 12 part numbers, covering industry-standard power packages and maximum current from 90 to 260A. The packages supported are PowerFLAT 5x6, PowerFLAT 3.3x3.3, DPAK, D2PAK, TO-220, TO-220FP, and 2-lead or 6-lead H2PAK.