Power mosfet offers ultra low on-resistance
Advanced Power Electronics has introduced a 30V power mosfet for high current load switching.
Designed to offer low on-resistance of 0.99m?, the AP1A003GMT is available in a PMPAK5x6 package with integrated thermal pad and with a standard SO-8 footprint.
The device features simple gate drive requirements, a breakdown voltage rating of 30V and a maximum drain-source current rating of 260A.
It is fully RoHS compliant and BFR/halogen free. Samples are available now.
