Of particular interest to engineers designing USB4 and Thunderbolt interfaces, is that the new device uses Nexperia’s TrEOS ESD protection technology with active silicon-controlled rectification.
It delivers a combination of extremely low capacitance (down to 0.1 pF); extremely low clamping (dynamic resistance down to 0.1 Ω) and very high robustness against surge and ESD pulses (up to 20A 8/20 µs for very fast datalines). PESD2V8R1BSF comes in the ultra-low inductance SOD962 package.
TrEOS protection diodes are packaged in a very compact and robust DSN0603-2 (SOD962) package. The advantages of this form factor includes: low inductance for faster protection and a reduction in mechanical and thermal stress due to bond-wires being replaced by integration into the monolithic circuit.
