“Our 100V N-channel FET is a major advance over our previous PowerTrench MOSFETs, and performs dramatically better than its competitors in virtually every category,” said Suman Narayan, general manager of Fairchild’s iFET business unit.
The primary advantages of the FDMS86181 are said to include a 40% reduction in Rdson and minimised gate charge, which reduces switching losses. An exceptionally low Qrr is claimed to ‘virtually eliminate’ the voltage overshoots that cause ringing, allowing for the reduction or elimination of snubbers.
According to the company, Rdson at a VGS of 10V is 4.2mO, increasing to 12mO at a VGS of 6V.
The part is supplied in an 8pin Power 56 package measuring 5 x 6mm.
