Infineon's CoolSiC MOSFETs 2000 V offer increased power density

Infineon has introduced the CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package.

The device aims to meet designers' demand for increased power density without impacting system's reliability even under demanding high voltage and switching frequency conditions.

The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current.

It is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are suitable for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications.

The CoolSiC MOSFET 2000 V product family is suited for high DC link systems with up to 1500 V DC. Compared to 1700 V SiC MOSFETs, the devices also provide a sufficiently high overvoltage margin for 1500 V DC systems.

The CoolSiC MOSFETs deliver a benchmark gate threshold voltage of 4.5 V and are equipped with a robust body diode for hard commutation.

Due to the .XT connection technology, the components offer first-class thermal performance. They are also highly resistant to humidity.

In addition to the CoolSiC MOSFETs 2000 V, Infineon will soon be launching the matching CoolSiC diodes. The first launch will be the 2000 V diode portfolio in the TO-247PLUS 4-pin package in the third quarter of 2024, followed by the 2000 V CoolSiC diode portfolio in the TO-247-2 package in the final quarter of 2024.

These diodes are particularly suitable for solar applications. A matching gate driver portfolio is also available.