Infineon extends its portfolio of CoolSiC MOSFET power modules

Addressing the fast-growing demand for Silicon Carbide (SiC) solutions, Infineon has added a number of new devices to its portfolio of 1200V CoolSiC MOSFETs.

The CoolSiC Easy 2B power modules have been designed to help reduce system costs by increasing power density. In addition, they can also lower operational costs significantly. Owing to about 80 % lower switching losses compared to silicon IGBTs, inverter efficiency levels exceeding 99 % can be reached. Because of the specific SiC properties, the same or even higher switching-frequency operation can be achieved. This is particularly attractive for fast switching applications such as UPS and energy storage.

The Easy 2B standard package for power modules is characterized by an industry-leading low stray inductance.

The half-bridge configuration of the CoolSiC Easy 2B can be used for building up four- and six-pack-topologies. The new device widens the power range of modules in half-bridge topology with an on-resistance (R DS(ON)) per switch to only 6 mΩ. This is a benchmark performance for devices in Easy 2B housing.

In addition, the integrated body diode of the CoolSiC MOSFET chip ensures a low-loss freewheeling function without the need for another diode chip. While the NTC temperature sensor facilitates the monitoring of the device, the PressFIT technology reduces assembly time for mounting the device.