The GT20N135SRA IGBT features a collector-emitter saturation voltage (VCE(sat)) of 1.60V (typ.) and a diode forward voltage (VF) of 1.75V, which represent reductions of around 10% and 21% respectively when compared with conventional products. As both the IGBT and diode have improved their conduction loss characteristics at high temperature (TC=100℃), the device will be able to deliver more efficient operation.
An improved maximum junction-to-case thermal resistance (Rth(j-c)) of 0.48℃/W allows for easier thermal design with less heatsinking as it represents an approximate 26% reduction from existing products.
The GT20N135SRA can suppress the short circuit current through a resonance capacitor that is generated when the device is started. The product’s peak short circuit current is 129 A, almost a third lower than existing products.
The Safe Operating Area (SOA) is widened, meaning that the IGBT is less likely to break down, thereby giving designers greater flexibility.
