The S5 device is said to feature efficiency levels up to and beyond 98% giving high energy yields for solar cell installations and reduced system costs. It is also claimed to deliver increased levels of robustness and quality to aid designers in achieving up to 20 years of operational lifetime.
The Discrete IGBT features improved switching behaviour to reduce circuit complexity and overall system costs by eliminating the need of capacitors and Zener diodes. In addition, increased robustness and quality levels are said to be enhanced further with a 25% increase in surge current handling capability. The device has a typical saturation voltage VCE(sat) of 1.60V at 175°C, meaning high efficiency can be maintained even during high temperature operations.
