Intended for high efficiency and reliability requirements of electric vehicle (EV) on-board chargers, motor drive inverters, and off-board charging stations, these 1200V SiC MOSFETs provide the industry-leading lowest on-resistance available for an automotive qualified TO-247-4L with a standard gate drive of 15V.
Electric vehicle manufacturers are increasingly implementing 800V electrical systems to reduce system’s size and weight while increasing range and enabling significantly faster charging speeds. This 1200V automotive grade aSiC MOSFETs have been specifically designed for these demanding applications by providing superior switching performance and efficiency over standard silicon devices.
The AOM033V120X2Q is based on the company's second generation aSiC MOSFET platform and is packaged in an optimised TO-247-4L.
Unlike the standard 3 lead package, using an additional sense lead reduces the package inductance effects and enables the device to operate at a higher switching frequency with up to 75% reduction in switching losses compared to standard packaging.
The recommended gate driving voltage of only 15V allows for the widest compatibility of gate drivers for ease of adoption in a variety of system designs. In addition, aSiC MOSFETs have a very low increase in on-resistance up to the rated 175° C to minimize power losses and further increase efficiency.
The company's automotive aSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options.