International Rectifier has launched two automotive DirectFET2 power mosfets optimised with low gate charge for switching applications including switch mode power supplies (smps), Class D audio systems, high intensity discharge (hid) lighting and other automotive power conversion applications.
The AUIRF7648M2 and AUIRF7669L2, IR's first automotive grade DirectFET devices tailored to dc/dc applications, have been designed to offer low gate charge and on state resistance (rds(on)) to help minimise switching and conduction losses in a variety of switching applications. According to IR, the low parasitic inductance offered by the DirectFET power package results in 'excellent high frequency switching performance' with reduced waveform ringing, which in turn helps limit emi and filter size. IR says the AUIRF7648M2 features a pcb footprint 54% smaller than a DPak while the AUIRF7669L2's is 60% smaller than a D2Pak. Package current ratings are 179A and 375A respectively for each device and the DirectFET package has been designed to place no constraint on current capability of the silicon. The maximum package current ratings are said to 'far exceed' the limits of traditional DPak and D2Pak packages.