Spin transfer MRAM demonstrated on standard CMOS wafer

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A working prototype spin transfer MRAM (ST-MRAM) has been produced by Spin Transfer Technologies (STT) using industry standard CMOS wafers.

ST-MRAM is said to be an alternative to memory technologies such as flash, DRAM and SRAM, supporting high speed and non volatile storage. This is said to make it suitable for a range of applications, including mobile devices, data storage systems, industrial, automotive and cache memory.

Other companies have produced ST-MRAM devices, including Everspin, which unveiled a 64Mbyte device at electronica in 2012. However, STT says its orthogonal (OST-MRAM) technology supports faster reads, writes or switching than in conventional spin transfer MRAM approaches, while consuming less energy.

Barry Hoberman, CEO of STT, said: “This demonstration of a functional memory device is a critical milestone and paves the way to commercialisation. Using 60nn perpendicular magnetic tunnel junction devices, our technologists have successfully integrated our proprietary memory design on standard CMOS wafers. This pioneering development puts STT at the leading edge of product innovation in this industry.”