Samsung begins mass production of 20nm DRAM

Aimed at complex computing applications, the 4Gb DRAM modules are claimed to be the most advanced of their kind. The South Korean tech giant said it had "pushed the envelope of DRAM scaling, while utilising currently available immersion ArF lithography," in order to produce the new chips. In a statement, the company also said it had improved its design and manufacturing techniques, citing a 30% increase in productivity compared to its 25nm chips and a 25% reduction in energy consumption. "Samsung's new energy efficient 20nm DDR3 DRAM will rapidly expand its market base throughout the IT industry including the PC and mobile markets, quickly moving to mainstream status," said Young-Hyun Jun, executive VP of memory sales and marketing.