In what is being described as a groundbreaking increase in performance uses an internally developed high-voltage GaN switch technology.
Quasi-resonant InnoSwitch3-CP, InnoSwitch3-EP and InnoSwitch3-Pro ICs combine primary, secondary and feedback circuits in a single surface-mounted package. In the newly released family, GaN switches replace the traditional silicon high-voltage transistors on the primary side of the IC, reducing conduction losses when current is flowing, and reducing switching losses during operation. This results in substantially less wasted energy and therefore increased efficiency and power delivery from the space-saving InSOP-24D package.
Targeting high-efficiency flyback designs, such as USB-PD and high-current chargers/adapters for mobile devices, set-top boxes, displays, appliances, networking and gaming products, the new ICs provide accurate CV/CC/CP independent of external components, and interface to fast-charging protocol ICs. The InnoSwitch3-CP and ‑EP variants are hardware-configurable, while the InnoSwitch3-Pro incorporates a sophisticated digital interface for software control of CV and CC setpoints, exception handing and safety-mode options.
Commenting Balu Balakrishnan, president and CEO of Power Integrations said: “GaN is a pivotal technology offering significant efficiency and size benefits over silicon. We anticipate a rapid conversion from silicon transistors to GaN in many power applications. InnoSwitch3 has been the clear technology leader in the offline switcher IC market since we launched the silicon variants 18 months ago, and the new GaN-based ICs further extend our lead by advancing both the efficiency and power capability of our flyback products.”
