Kioxia develops UFS embedded flash memory devices with QLC technology

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Kioxia Europe has unveiled its Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices that utilise the company’s 4-bit per cell quad-level-cell (QLC) technology.

For applications needing high density, such as cutting-edge smartphones, the company's QLC technology makes it possible to achieve much higher densities in a single package.

Kioxia's UFS proof of concept (PoC) device is a 512 gigabyte prototype that utilises the company’s 1 terabit (128 gigabyte) BiCS FLASH 3D flash memory with QLC technology and has been designed to meet the performance and density requirements of mobile applications driven by higher resolution images, 5G networks, and 4K plus video.

Kioxia has been a leading supplier of UFS memory since 2013. Since that time, we focus on expanding our already broad line-up with new UFS Memory products for applications that demand superior interface performance,” noted Axel Stoermann, Vice President Memory Marketing & Engineering, Kioxia Europe. He continued, “With QLC UFS we can offer another solution which will meet the increasing requirements for Flash memory devices.”

The company said that it was now sampling its 512 Gigabyte QLC UFS PoC devices with select OEM customers.