Infineon broadens GaN on Si platform as demand set to soar

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Infineon says its gallium nitride (GaN) on silicon technology and product portfolio now features enhancement mode and cascode configuration platforms optimised for high performance applications.

"Infineon's GaN on silicon portfolio, combined with the acquisition of International Rectifier's GaN platform [and] our partnership with Panasonic clearly positions Infineon as the technology leader in this promising GaN market," said Andreas Urschitz, pictured, president of the company's Power Management and Multimarket Division.

According to IHS, demand for GaN on silicon power semiconductors is expected to grow at more than 50% per annum, with the market expected to be worth $800million by 2023.

Infineon's expanded portfolio will include dedicated driver and controller ICs that take advantage of the topology and higher frequency benefits of GaN, as well as 100V to 600V technologies from the acquisition of International Rectifier and enhancement mode products from the recently announced partnership with Panasonic.

"Customers can now choose enhancement mode or cascode configuration technologies," Urschitz continued. "Infineon is committed to developing SMD packages and ICs that will further leverage the performance of GaN in a compact footprint."