Cambridge GaN Devices debuts first commercial products at APEC

2 min read

GaN Devices (CGD), the fabless semiconductor company, has emerged from stealth mode to launch its first portfolio of products capable of reducing power losses by up to 50%.

Using the company’s debut appearance at APEC (Applied Power Electronics Conference), CGD has launched the ICeGaN 650 V H1 series, which comprises of four 650 V products that use Gallium Nitride-based technology.

Spun out of Cambridge University, CGD was founded by Dr. Giorgia Longobardi and Prof. Florin Udrea with the aim of delivering energy efficient GaN technology solutions. Over the past six years the company has invested in R&D to design, develop and commercialise products that are intended to tackle some of the world’s most pressing energy consumption challenges.

To date it has developed a portfolio of 39 patents and applications, 20 of which are distinctive inventions, focused on faster, smaller and more economical devices designed to drive widespread adoption of GaN technology.

The 650 V H1 product series represents CGD’s commercial launch and is an industry first, enabling the use of standard MOSFET drivers and no external components needed for protection. Engineers will be able to use CGD’s GaN-based technology in applications currently run with silicon-based devices or with other GaN solutions, while CGD is set to tap into a power semiconductor market estimated to be worth over $50 billion by 2027.

CGD’s patented ICeGaN (Integrated Circuit Enhancement Mode GaN) technology merges the ease-of-use benefits seen in Cascode configurations with the simplicity of a single die eMode (normOFF) HEMTs, as well as a number of integrated smart sense and protection features.

This is embedded in a single die that can then deliver up to a 50% power loss reduction compared to legacy silicon die. The technology is fully scalable on power and voltage for future developments.

ICeGaN is an integrated solution based on GaN with an intelligent and self-protecting mechanism that enhances the functionality, the versatility and the reliability of the transistor. This GaN technology can be applied to any system that requires power and operates in the 650 V market segment. Initial applications include consumer electronic products such as mobile chargers, adapters for laptops, gaming and AIOs computers and, in general, SMPS for consumer applications.

The 650 V H1 Series portfolio is also a first step into segments such as lighting and server power.

Further expansion is planned towards high power servers and telecom markets for data centres, PV inverters and renewable energy production, targeting EV/HEV systems in the future.

The company’s long term product strategy is also supported by several multi-partner UK and EU-funded projects, the latest being ICeData, an initiative aiming to develop and commercialise highly efficient GaN-based ICs for use in data centre server power supplies. This specific project is funded by the UK Government’s Department for Business, Energy and Industrial Strategy (BEIS) within the Energy Entrepreneur Fund which has selected leading UK technologies providing solutions for energy efficiency and reducing CO2 emissions.

Dr Giorgia Longobardi, CEO and founder of CGD, commented, “We’re excited to be unveiling CGD’s first products to the market. Our GaN-based technology makes a difficult engineering challenge easy while operating at a high level of efficiency. This is due to the team’s expertise in GaN and our profound knowledge of the material, the device physics, as well as our deep understanding of market requirements.

“Sustainability is a core tenet of our business and we are always researching innovative solutions with the aim of continuously lowering power losses in the electronic power industry to benefit a wide community of customers and end users. We’re extremely committed to not only delivering a green product, but to be a company that has embedded sustainability in its own culture with the entire team dedicated to the journey ahead.”