Automotive power mosfets offer improved energy efficiency

1 min read

Infineon Technologies has introduced a new series of single P channel 40V automotive power mosfets, produced using advanced trench technology.

The OptiMOS P2 devices are said to set new benchmarks in energy efficiency, CO2 emissions and cost savings. They provide currents between 50 and 180A and, when applied as high side switches in automotive bridge applications, do not require additional charge pump devices. In combination with pwm control, Infineon says the modules offer better thermal behavior and better avalanche performance than N channel mosfets. They are optimised for reverse battery protection and motor control applications in cars, with typical applications ranging from EPS motor controls to 3 phase and H bridge motors. Optimised to sustain temperatures up to 260°C, the OptiMOS devices are designed to provide low gate charge, low capacitance, low switching losses, high currents and strong FoM specifications. They have an RDS (on) of 2.4mO, which is said to be one third less than competing devices.