TRENCHSTOP IGBT7 technology available in a TO-247 housing

Infineon Technologies is offering its TRENCHSTOP IGBT7 technology in a discrete housing.

The device comes in a TO-247 with 650V break down voltage. The company's TRENCHSTOP portfolio consists of current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A and can be used for replacing previous technologies. This version of IGBT7 is intended to applications such as industrial motor drives, power factor correction, photovoltaic, and uninterruptible power supplies.

Based on the new micro-pattern trench technology, the IGBT7 chip performs with much lower static losses. For the same current class, the on-state voltage is reduced by ten percent, bringing significant loss reduction in the application, especially for industrial drives, which usually operate at moderate switching frequency.

The IGBT T7 technology has a very low saturation voltage (V CE(sat)) and is co-packed with an emitter controlled 7 th generation (EC7) diode, which provides for a 150 mV lower forward voltage (V F) drop and improved reverse-recovery softness.

The device features improved controllability and EMI performance. It can easily be adjusted to provide the application-specific best ratio of dv/dt and switching losses. The 650V TRENCHSTOP IGBT7 provides short circuit robustness as required in the applications.

In addition, it passed the JEDEC based HV-H3TRB (High Voltage High Humidity High Temperature Reverse Bias) test proving the ruggedness of the device in high humidity environments which can typically be found in industrial applications.