These devices have been designed for load switching in wearables and smartphones as well as for use in digital circuits with higher power requirements, such as space constrained computing, communications, industrial and automotive applications.
Notably, the RET in DFN configuration achieves dual space-saving. It does this by integrating the bipolar junction transistor (BJT) and resistor into a singular package, which offers substantial board space savings. Moreover, the leadless DFN packaging itself contributes to better spatial economy.
To reduce component count and simplify board design, the twelve new RETs combine dual BJTs with bias resistors integrated in the same package. They also include a second integrated resistor parallel to the base-emitter path to create a voltage divider that sets the base voltage. This offers finer tuning and better turn-off characteristic behaviour.
Since these internal resistors have higher tolerances than external resistors, RETs are suitable for switching applications where transistors operate in an on- or off-state, helping to overcome the temperature dependence of standard BJTs. They also help to reduce the costs associated with pick and place and manual handling.
RET devices in this series are available in a choice of dual NPN/NPN, NPN/PNP and PNP/PNP options. Unlike competing devices, according to Nexperia, its RETs fully deliver their specified 500 mA output current from a tiny DFN2020(D)-6 package measuring only 2 mm x 2 mm x 0.65 mm. This packaging is specialised for improved thermal performance in high-power applications, delivering up to 1 W total output power from collector-emitter voltages (VCEO, open base) up to 50 V.
Nexperia’s RET devices are available as standard and automotive (AEC-Q101 qualified) parts. The portfolio comprises more than 400 products, including both single and dual RETs with an expansive array of resistor combinations. Available in DFN and leaded SMD packages, Nexperia offers the optimal match for many applications.