Nexperia release lowest-ever RDS(on) power MOSFET

Nexperia has announced the release of the PSMNR51-25YLH, its lowest-ever RDS(on) power MOSFET of 0.57 mΩ at 25 V.

Utilising Nexperia’s NextPowerS3 technology, the performance is offered without compromising other important parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA) or gate charge QG.

Very low RDS(on) devices are required in many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency.

Nexperia’s PSMNR51-25YLH MOSFET offers a maximum drain current rating up to 380 Amps, important for motor control applications where motor-stall can result in very high current surges for short periods which the MOSFET must withstand for safe and reliable operation.

The device is packaged in LFPAK56, Nexperia’s 5mm x 6mm Power-SO8 compatible package, offering a high performance copper-clip construction which absorbs thermal stresses, increasing quality & lifetime reliability.

Typical applications include: battery protection; brushless DC (BLDC) motor control (full bridge, 3-Phase topologies); server power for ORing, hotswap operation and synchronous rectification.