MOSFETs for quasi resonant flyback topologies

The 700V CoolMOS P7 family has been developed by Infineon Technologies to serve the trend in quasi resonant flyback topologies. The MOSFETs are said to offer performance improvements compared to currently used superjunction technologies which could help improve soft switching topologies like smart phone and tablet chargers.

The CoolMOS family supports fast switching and high power density designs for TV adapters, lighting, Audio, and Aux power and offers an improved form factor for slim designs.

The technology reduces switching losses from 27 to 50%. In a flyback based charger application, the technology is claimed to lead to up to 3.9% higher efficiency. In comparison to the previous C6 technology, it offers a 2.4% gain in efficiency and 12K lower device temperature.

The integrated Zener diode ensures an increased ESD ruggedness of up to HBM Class 2 level. Additionally, the MOSFETs are said to show low losses due to its low RDS (on)*Qg and RDS (on)*EOSS. Compared to C6 technology, the family features an extra 50V blocking voltage.

The technology has been developed with a VGSth of 3V and a tolerance of ±0.5V. This is said to make the family easy to design-in and enables the usage of lower gate source voltage.

The family is available with RDS(on) package combinations, including 360mΩ up to 1400mΩ in IPAK SL, DPAK and TO-220FP.