MOSFETs cut footprint, improve efficiency
Toshiba has launched the DTMOS IV-H series of high speed switching type super junction MOSFETs.
The TK31N60X, TK39N60X and TK62N60X are based on the company's fourth generation 600V super junction MOSFET DTMOS IV series.
Utilising Toshiba's single epitaxial process, they are suited to applications that require high reliability, power efficiency and a compact design, such as high efficiency switching power supplies for servers and telecom base stations and power conditioners for photovoltaic inverters.
The MOSFETs achieve a high speed switching performance while keeping the low ON-resistance level of conventional DTMOS IV – all without loss of power. This is accomplished through the reduction of parasitic capacitance between Gate and Drain, (typical Ciss ranges from 3000 to 6500pF) which also contributes to improved power efficiency and downsizing of products.
Gate pattern optimisation results in a 45% reduction in Gate-Drain charge (typical Qg ranges from 65 to 135nC) when compared with conventional DTMOS IV.
