600V super junction mosfets offer leading RDS(on)

Toshiba Electronics Europe has introduced a new family of 600V mosfets with integrated high speed intrinsic diodes

Based on the company's fourth generation 600V super junction DTMOS IV process, the TK16A60W5, TK31J60W5 and TK39J60W5 are designed to improve power efficiency in switching power supplies, micro inverters, adaptors and photovoltaic inverters. The TK16A60W5 is supplied in a TO-220SIS package, with a maximum current rating of 15.8A and an RDS (on) at 0.23O. The diode has a typical reverse recovery time of 100ns. In comparison, the standard version has a typical reverse recovery of 280ns. Both the TK31J60W5 and TK39J60W5 are supplied in a TO-3P(N) package and have maximum currents of 30.8 and 38.8A respectively. Maximum respective RDS(on) ratings are 0.099 and 0.074O. Typical reverse recovery diode characteristics are 135 and 150ns.