The IXD2012NTR has been optimised for high-frequency power applications, delivering improved switching performance and enhanced design flexibility.
The device operates over a wide 10 V to 20 V voltage range and supports a high side switch of up to 200 V in a bootstrap operation. Its logic inputs are compatible with standard TTL and CMOS levels down to 3.3 V, ensuring seamless integration with a wide range of control devices. With a 1.9 A source and 2.3 A sink output capability, the IXD2012NTR provides robust gate drive currents ideal for high-speed switching applications.
Its integrated cross-conduction protection logic prevents the high- and low-side outputs from turning on simultaneously, while simplifying circuit design through a high level of integration.
Offered in a compact SOIC(N)-8 package and operational over a temperature range of −40 °C to +125 °C, the IXD2012NTR can operate in harsh environments.
Key features and benefits:
High-Speed Switching Performance: Drives two N-channel MOSFETs or IGBTs in a half-bridge configuration.
Wide Operating Voltage Range: 10 V to 20 V for versatile power management applications.
High Side Switching Capability: Operates up to 200 V in a bootstrap configuration.
Compatibility and Flexibility: Logic inputs compatible with TTL and CMOS levels down to 3.3 V for easy interfacing with controllers.
Output Current Drive Capability: 1.9 A source and 2.3 A sink output for robust gate drive currents.
Enhanced Efficiency and Integration: Integrated cross-conduction protection reduces power loss and simplifies design.
Industry-Standard Pinout: Ensures drop-in replacement capability for existing designs.
The IXD2012NTR supports various high-frequency applications, including:
- DC-DC converters
- AC-DC inverters
- Motor controllers
- Class-D power amplifiers
