Hybrid power modules extended to 3300V and 1500A
1 min read
Toshiba has extended its family of silicon carbide (SiC) devices with the launch of a 3300V, 1500A power module. The MG1500FXF1US71 plastic case module IEGT integrates an N-channel IEGT and a SiC fast recovery diode into a package with a footprint of just 140 x 190mm.
The module is optimised to save energy, space and weight, and reduce acoustic noise in high power switching inverter and motor control designs. Target applications include rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution.
Toshiba says the use of an SiC Schottky barrier diode significantly decreases reverse recovery current - and leads to a corresponding decrease in turn-on loss compared to silicon alternatives. A combination of diode and an improved internal package design to reduce stray inductances allows the MG1500FXF1US71 to operate with a reverse recovery loss up to 97% lower than a module that uses a conventional silicon diode.
The MG1500FXF1US71 offers an isolation voltage rating of 6000VAC (rms for one minute) and can handle a peak turn off collector current of 3000A. Collector power dissipation (at 25°C) is 5000W. An operating temperature range of -40 to 150°C is compatible with the extended temperature environments that characterise the target applications.
