The CHT-PLUTO is a 1200V/30A dual silicon carbide MOSFET module primarily meant for half-bridge applications such as DC-DC converters or motor drives in high temperature environments. The two independent switches can be used in parallel to deliver a total of 60A with a breakdown voltage in excess of 1200V and an on-resistance of 23m? at 25°C and 50m? at 225°C at VGS=20V.
High operating frequencies can be used due to the low switching losses of SiC transistors. CHT-PLUTO also embeds freewheeling Schottky diodes with a low forward voltage that reduces the power dissipation during dead times. Each switch can be controlled with a -5/+20V gate voltage.
The MOSFET is available in a hermetically sealed 8 pin HM8A metal package with dimensions of 18 x 29mm excluding mounting tabs. The devices are electrically isolated from the case of the package.