High-performance GaN-on-SiC power amplifier

Qorvo’s TGA2976-SM gallium nitride (GaN) power amplifier, is now available through Mouser. Developed using Qorvo’s production 0.25µm GaN on silicon carbide (SiC) process, the TGA2976-SM is said to provide excellent wideband performance, power, power added efficiency (PAE), and gain.

The Qorvo TGA2976-SM wideband amplifier is available in a low-cost, 4 × 4mm surface-mount air cavity laminate package, lead-free and RoHS compliant. It is claimed to support 40V operation from 0.1 to 3.0GHz and provide greater than 10W of saturated output power with greater than 13dB of large signal gain and greater than 38% PAE. The TGA2976-SM is fully matched to 50Ohms at both RF ports, allowing for simple system integration.

GaN technology supports radio frequency (RF) power densities between five and six times higher than gallium arsenide-based RF amplifiers. GaN technology’s proven performance and reliability is suitable for infrastructure, defence and aerospace applications such as radar, electronic warfare, communications, navigation, and similar applications. This increase in performance capability offers designers the flexibility to reduce board space and system costs while improving system performance.