DPAK+ mosfets target automotive applications

Toshiba Electronics Europe has announced a new range of rugged automotive power mosfets. The devices combine the company's trench MOS process with its enhanced DPAK+ package technology.

They company claims they offer significant improvements to application performance while reducing pxb real estate and noise. They are suitable for a range of automotive applications, including switching regulators, dc/dc converters and motor drives. The series comprises 11 N channel devices with maximum voltage ratings of 40, 60 and 100V, and 10 P channel devices with maximum voltage ratings of -40 and -60V. Current ratings range from ±8 to ±80A, depending on the device chosen. All of the mosfets are designed to operate at temperatures up to 175ºC. The DPAK+ package has the same form factor, and is pin to pin compatible with, a conventional DPAK package. A proprietary internal design is said to reduce on resistance and thermal losses and ensure improved efficiency, current handling and reliability when compared to conventional DPAK alternatives. Based on Toshiba's 'WARP' technology, DPAK+ replaces conventional internal aluminium bondwires between the mosfet die and the package leads with wider copper clamps. The clamping mechanism is designed to maintain a reliable mechanical connection capable of withstanding repeated power cycling as well as exposure to shock and vibration. The new mosfets in the series have an on resistances of 2.4m? (typical, VGS = 10V). Typical thermal resistance between channel and case is rated at 1.5º/W, while power dissipation at 25ºC is said to be 100W.