Cree adds four 650V SiC diodes to its range

Four 650V SiC diodes have been added to Cree's portfolio. Developed in response to the power supply industry's demand for components with a nominal voltage rating higher than 600V, the Cree Z-Rec SiC Schottky diodes enable high efficiency power systems with improved reliability, simplicity and total cost.

Characteristics of the diodes include: zero reverse recovery current; high frequency operation with low EMI; temperature-independent switching behaviour; reduced heat sink requirements; and higher surge and avalanche capabilities. The diodes also exhibit higher efficiency than comparable silicon diodes and a positive temperature coefficient enables parallel devices without thermal runaway.

The C3D06065E (6A), C3D08065E (8A) and C3D10065E (10A) diodes are supplied in TO-252-2 (DPAK) packages. With zero recovery voltage and fast switching, the devices are said to enable 'right sizing', optimising cost and performance in switch mode power supplies, power factor correction, and motor drives, among other applications.

Automotive qualified, the diodes are also suited to use in power factor correction and onboard power electronic conversion systems in hybrid and electric vehicles.

The fourth diode – the 6A C3D06065I – is an internally isolated device that provides an alternative to full-pack diodes and complements the existing C3D08065I and C3D10065I products. Supplied in a TO-220 package with internal ceramic insulation that provides 2.5kV isolation, the diode provides greater operating ranges and capabilities than comparable full-pack devices.