Designed for high power density in DC-DC applications, the AONK40202 provides features that meet the requirements of AI servers and data centre power distribution. Its Source-Down packaging technology offers a larger source contact to the PCB, and its centre gate pin layout allows easier routing on the PCB, so the gate driver connection can be minimised.
Offering impressive current handling capabilities, the AONK40202 MOSFET’s DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319A with a maximum junction temperature rated at 175°C.
Consequently, this provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency.
“AONK40202, which utilises advanced DFN3.3x3.3 Source-Down technology, offers a reduction in power losses and delivers better thermal performance compared to traditional DFN3.3x3.3 Drain-Down packaging solutions. With its lower on-state resistance (RDS(on)) and enhanced thermal performance, it provides designers with the advanced technologies necessary to utilise PCB space more effectively,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS.
