Intended to provide customers with a higher-density option for a wide range of applications, the AS4C1G16D4-062BCN delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates.
To increase battery life in portable electronics such as smartphones and tablets, the DDR4 SDRAM features a low operating voltage of +1.2V (±0.06V). The device is designed, qualified, and recommended for use in 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs. Built on an 8n-prefetch architecture, the device offers fast clock speeds up to 1600MHz and transfer rates up to 3200 MT/s.
The 1Gb x 16-bit AS4C1G16D4-062BCN supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.
With minimal die shrinks, the DDR4 SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in the commercial (0°C to +95°C) temperature range, the device is ideal for the industrial, networking, telecommunications, gaming, and consumer markets.
Samples and production quantities are available now.
