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150V N-channel power MOSFET improves power supply efficiency

Toshiba Electronics has launched a 150V N-channel power MOSFET that uses the latest generation U-MOSX-H process to significantly reduce losses.

Voltage spikes between the drain and source during switching have been reduced, helping to improve EMI performance within switching power supplies.

The device is suitable for a wide range of applications including switching power supplies within industrial equipment, including applications in communication base stations and data centres.

The TPH9R00CQH MOSFET has a very low drain-source on-resistance (RDS(ON)) of just 9.0mΩ (max. @ VGS=10V), which represents a reduction of approximately 42% when compared to the existing 150V product (TPH1500CNH) that is based upon the current generation U-MOSVIII-H process.

Key figures-of-merit (FoM) including RDS(ON) x QSW and RDS(ON) x QOSS have reduced by approximately 20% and 28% respectively, thereby further enhancing performance.

Careful optimisation of the device structure means that charge characteristics have been improved. With a total gate charge (Qg) of just 44nC and a gate switch charge (QSW) of 11.7nC the device offers a much-improved level of performance, especially in high-speed applications.

The TPH9R00CQH offers two surface mount (SMD) package options – SOP Advance (5.0mm x 6.0mm) and SOP Advance(N) (4.9mm x 6.1mm) which can be selected to meet the needs of any application.