Voltage spikes between the drain and source during switching have been reduced, helping to improve EMI performance within switching power supplies.
The device is suitable for a wide range of applications including switching power supplies within industrial equipment, including applications in communication base stations and data centres.
The TPH9R00CQH MOSFET has a very low drain-source on-resistance (RDS(ON)) of just 9.0mΩ (max. @ VGS=10V), which represents a reduction of approximately 42% when compared to the existing 150V product (TPH1500CNH) that is based upon the current generation U-MOSVIII-H process.
Key figures-of-merit (FoM) including RDS(ON) x QSW and RDS(ON) x QOSS have reduced by approximately 20% and 28% respectively, thereby further enhancing performance.
Careful optimisation of the device structure means that charge characteristics have been improved. With a total gate charge (Qg) of just 44nC and a gate switch charge (QSW) of 11.7nC the device offers a much-improved level of performance, especially in high-speed applications.
The TPH9R00CQH offers two surface mount (SMD) package options – SOP Advance (5.0mm x 6.0mm) and SOP Advance(N) (4.9mm x 6.1mm) which can be selected to meet the needs of any application.