Toshiba announces next generation RF SOI process

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Toshiba has developed a next generation TarfSOI (Toshiba advanced RF SOI) process optimised for radio-frequency (RF) switch applications.

According to Toshiba RF switch ICs fabricated using the new TaRF8 process are able to achieve an insertion loss of just 0.32dB at 2.7GHz. Compared to products using Toshiba’s current TaRF6 process, the insertion loss has been improved by 0.1dB while maintaining the same level of distortion characteristics.

Designed for use in smartphones, the SP12T RF switch IC features an integrated MIPI-RFFE controller for mobile applications. The device is suitable for use in devices compliant with 3GPP GSM, UMTS, W-CDMA, LTE and LTE-Advanced standards.

With the trend in mobile communications towards high data rate, high-capacity data transfers, RF switch ICs used in mobile devices and smartphones, require multi-port support and improved RF performance. Lowering insertion loss is recognised as a particularly important factor in this, as it decreases RF transmission power loss, which can support a longer battery life for mobile devices.

Sample shipments of SP12T RF switch ICs fabricated with the new process will start in January 2016.