Self protected mosfets raise protection levels for inductive loads

Semiconductor specialist Diodes has announced further additions to its IntelliFET range of self protected mosfets. The 60V, 75mO rated single N channel ZXMS6006DG/SG and dual N channel ZXMS6006DT8 have been designed to provide thermal shutdown, short circuit, over voltage, over current and input ESD protection facilities. According to Diodes, this enables circuit designers to dramatically increase circuit reliability.

Suiting automotive and industrial applications, the self protected mosfets are said to be suitable for switching inductive loads such as motors, relays and lamps at low frequencies. The dual channel ZXMS6006DT8 integrates over temperature, over current, over voltage and input ESD protection on each of its two independent and isolated switching channels. Packaged in an SM8, diodes says the device delivers a thermal efficiency 30% better than competing SO8 devices, enabling cooler running and more reliable end applications. Both the ZXMS6006DG/SG have nominal load current ratings of 2.8A at an input voltage of 5V and have an avalanche clamping rating of 490mJ.