Samsung unveils first eMRAM test chip based on 28nm FD-SOI process

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Samsung Electronics has announced that it has expanded its differentiated FD-SOI process technology leadership by offering derivatives that include RF and eMRAM.

Having already established a full set of FD-SOI design enablement solutions with a range of key ecosystem partners for the 28-nanometer (nm) FD-SOI (28FDS) process technology, Samsung said that this eMRAM testchip tape-out milestone on the 28FDS process technology meant that it was well placed to offer RF and eMRAM on 28FDS and 18FDS technologies.

“Samsung started mass production of its 28FDS process technology last year and has already reached the desired process maturity earlier than originally scheduled,” said Ryan Lee, Vice President of Foundry Marketing at Samsung Electronics. "So far we have taped out more than 40 products based on FD-SOI process for various customers.”

Samsung eMRAM is the newest addition to the family of embedded non-volatile memories and it offers much improved speed, power and endurance advantages.

“By adding only three layers in the back-end of the process, we can simply integrate the new eMRAM cells into the existing baseline FD-SOI process,” said Gitae Jeong, Senior Vice President of the Advanced Technology Development Team at Samsung Electronics.

“Samsung is working with NXP on a test chip to deliver eMRAM macro capability which is optimised for embedded processor integration and manufacturing.” said Ron Martino, VP and GM for NXP’s iMX Applications Processor product line. “This test chip is complete and will produce results in the 4th quarter. This work will further enable the vision of integrating diverse SOC components on a single SOC in a cost effective manner.”

Samsung has completed its full set of 28FDS technology eco-system solutions with various eco- system partners including Cadence and Synopsys. Customers can access Samsung certified 28FDS reference flows from Cadence and Synopsys along with application-specific IP offerings.