New mosfets deliver cooler running than rivals claims Diodes

Occupying 0.6mm² of pcb area, Diodes says the package takes less than half the board space of equivalent SOT723 packaged parts. It features a junction to ambient thermal resistance (Rthj-a) of 256^ºC/W, supports a power dissipation of up to 1.3W under continuous conditions, double that of comparable alternatives, according to the company. The optimisation and off board height of 0.4mm makes the mosfets suitable for thin profile portable consumer electronics, including tablet pcs and smartphones. Both n-channel and p-channel devices are initially being offered by Diodes with breakdown voltage ratings of 20, 30 and 60V for use in a variety of high reliability load switching, signal switching and boost conversion applications. Diodes says the 20V rated DMN2300UFB4 n-channel mosfet displays an Rdson performance of 150mO, more than 50% lower than competing solutions. Its p-channel companion, the 20V rated DMP21D0UFB4 offers a similar performance. Electrostatic discharge ratings of the mosfets is 2kV and 3kV respectively.