Micron, A*Star collaborate on next generation memory technology

1 min read

Semiconductor specialist, Micron Technology is collaborating with Singapore's A*Star Data Storage Institute on the development of spin transfer torque magnetic random access memory (stt-mram).

According to the companies, this is a promising alternative non volatile memory technology for next generation storage. Commercial solid state drives use nand flash memory to store data and demand has been increasing rapidly. However, as the industry continues to scale nand flash memory, issues such as limited endurance and high write power have been highlighted. In a bid to research alternative non volatile memory solution stt-mram, Micron and DSI are investing in joint research to develop high density devices during the next three years. Dr Pantelis Alexopoulos, executive director of DSI, said: "DSI is excited about this collaboration with Micron. It signifies our progressive success in attracting the world's best to develop an R&D ecosystem in Singapore for next generation non volatile memory. I believe this is a good opportunity for DSI, as we combine our technological expertise in stt-mram with Micron's expertise in memory product development in an advanced fabrication facility."