Infineon to acquire Wolfspeed

1 min read

Infineon has entered into a definitive agreement to acquire the Wolfspeed Power and RF division of Cree. The deal also includes the related SiC wafer substrate business for power and RF power. According to Infineon, the acquisition will broaden its capability in compound semiconductors, power and RF power solutions in markets such as electro-mobility, renewables and cellular infrastructure relevant for IoT.

Dr. Reinhard Ploss, CEO of Infineon Technologies, said: “Joining forces with Wolfspeed will enable us to create additional value for our customers with the broadest and deepest portfolio of innovative technologies and products in compound semiconductors available in the market. With Wolfspeed we will become number one in SiC-based power semiconductors. We also want to become number one in RF power. This will accelerate the market introduction of these innovative technologies, addressing the needs of modern society – such as energy efficiency, connectivity and mobility.”

Wolfspeed is a provider of silicon carbide (SiC)-based power and gallium nitride (GaN)-on-SiC-based RF power solutions. This includes the related core competencies in wafer substrate manufacturing for SiC, as well as for SiC with a monocrystalline GaN layer for RF power applications.

Together, Infineon and Wolfspeed will accelerate the development of components, enabling customers to develop differentiating systems. Major areas where the applications will profit from SiC are renewables and automotive, which both benefit from the increased power density and improved efficiency.