GaN on silicon pioneer raises €4million
imec spin off EpiGaN has raised €4million in its first funding round. The cash will allow the company to start volume production of GaN on silicon epitaxial materials for next generation power electronics.
Amongst the investors is Robert Bosch Venture Capital. Gadi Toren, one of the company's investment partners, said: "We are impressed by the technological achievements of EpiGaN and the capabilities of the team. We believe this technology has the potential to make significant contributions to the world of power conversion and are happy to be part of the investor syndicate."
EpiGaN was founded by Dr Marianne Germain, Dr Joff Derluyn and Dr Stefan Degroote, all of whom had been working for more than 10 years at imec developing GaN on Si technology. "EpiGaN has demonstrated the capability of its innovative material to support record device performance either in high voltage, high current or high frequency operation," said Dr Marianne Germain, EpiGaN's ceo. "We are proud that investors have decided to support our initiative and will enable us to [provide material in volume to our] customers."
