An alternative approach to higher power boost converters
A higher power boost converter often requires special consideration to minimize power losses and temperature rise in the FETs, diode, and inductor.
Regarding FETs, many designers opt to place FETs in parallel to reduce conduction losses. However, placing FETs in parallel can increase transitional losses. This white paper from National Semiconductor discusses a number of approaches that can be considered to reduce total losses in boost FETs.
