P channel mosfet offered in space saving DFN1616 package

Designed to increase battery efficiency and reduce board space, the DMP1245UFCL 12V P channel enhancement mode mosfet from Diodes has been introduced to meet the requirements of designers of compact portable consumer electronics.

The mosfet is provided in a DFN1616 package and is characterised by a low RDS (on), which ensures conduction losses are kept to a minimum. At 29mO at VGS of 4.5V, the mosfet's on resistance performance is claimed to be 15% better than that of its closest rival, benefitting battery disconnect and general load switching applications. The module has a typical off board profile of 0.5mm and occupies a pcb area of 2.56mm2. Diodes claims this represents 55% of that occupied by alternative larger 2 x 2mm packages.