Infineon introduces CoolGaN IPS family

To support this development pf power switches based on the wide bandgap (WBG) material gallium nitride (GaN), Infineon has added the CoolGaN IPS family of integrated power stage (IPS) products to its portfolio of WBG power devices.

The initial IPS portfolio consists of half-bridge and single-channel products, targeting low-to medium power applications, including chargers and adapters and switched-mode power supplies (SMPS).

The 600 V CoolGaN half-bridge IPS IGI60F1414A1L is suited for compact and lightweight designs in the low-to-medium power range. Coming in a thermally enhanced 8x8 QFN-28 package, it enables systems with very high power density. The product combines two 140 mΩ / 600 V CoolGaN e-mode HEMT switches with dedicated galvanically isolated high- and low-side gate drivers out of Infineon’s EiceDRIVER family.

According to Infineon, the IGI60F1414A1L is easy to control due to the isolated gate driver with two digital PWM inputs. The integrated isolation function, the clean separation of digital and power ground and the reduced complexity of the PCB layout are seen as being crucial in achieving shorter development time, lower system bill-of-material and lower total cost.

The gate driver’s input-to-output isolation is based on Infineon’s coreless transformer (CT) technology which guarantees high speed and robustness even for extremely fast switching transients with voltage slopes exceeding 150 V/ns.

The switching behaviour of the IGI60F1414A1L can be adapted to the needs of different applications by means of a few passive gate path components. This allows slew rate optimisation, for example, to reduce electromagnetic interference (EMI) efforts, steady-state gate current setting, and negative gate drive for robust operation in hard-switched applications.

In addition, due to the system-in-package integration and the highly accurate and stable propagation delay of the gate drivers, the IGI60F1414A1L enables the lowest possible system dead-times. This helps to maximise system efficiency, leading to the next level of power density up to 35 W/in³ for charger and adapter solutions.