23 Feb 2017

Toshiba goes to 64 layer flash with 3bit/cell

Toshiba has announced a 64 layer flash memory that uses 3bit/cell technology to offer a capacity of 512Gbit. The part will be suited to applications including enterprise and consumer solid state disks. Sampling has already started and mass production is scheduled for the second half of 2017.

According to the company, the next target on its BiCS FLASH road map is a 1Tbyte product in which 16 dice will be stacked in one package. It says it plans to start sampling this part in April.

The 512Gbit device increases capacity per device by 65% compared to the 48 layer 256Gbit part, while reducing the cost per bit.

multilayer flash memory

solid state disk