SK Hynix introduces 72-layer 3D NAND flash

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A 72-layer 256Gbit 3D NAND flash has been introduced by SK Hynix, based on the company’s triple-level cell arrays and own technologies.

The 72-layer NAND is said to stack 1.5 times more cells than the 48-layer, achieving 30% more efficiency in productivity. A single 256Gb NAND flash chip can represent 32Gbytes storage.

“With the introduction of this industry’s highest productivity 3D NAND, SK Hynix will mass produce the 256Gb 3D NAND in the second half of this year to provide worldwide business clients for optimum use in storage solutions” said vice president Jong Ho Kim, the Head of Marketing Division. “The company plans to expand the usage of the product to SSDs and mobile gadgets such as smart phones.”

By bringing high speed circuit design into the new chip, its internal operation speed is claimed to be two times faster and its read/write performance 20% higher than a 48-layer 3D NAND chip.

Applications for 3D NAND include AI, big data and cloud storage.