Schottky rectifiers deliver improved switching efficiency says ON
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ON Semiconductor has introduced a new range of 100V trench based low forward Schottky rectifiers for applications such as switching power supplies for notebook adapters or flat panel displays, reverse battery protection circuits and high frequency dc/dc converters.
According to ON, the NTST30100CTG, NTST20100CTG and NTSB20U100CTG range of devices utilise a trench topology that enables 'exceptionally low' forward voltage drop and reduced leakage current. This, says the company, results in low conduction losses and a 'substantial improvement' in circuit efficiency.
The LVFR family utilises a trench MOS structure designed to enable an enhanced conduction zone under forward bias, resulting in reduction in forward voltage drop. Under reverse bias, this structure creates a 'pinch off' effect, resulting in reduced leakage current. Unlike planar Schottky rectifiers, ON says the LVFR's switching performance is strong across their entire operating junction temperature range of -40 to 150°C.
ON compared the performance of its 30A, 100V LVFR (NTST30100SG) with a standard 30A 100V planar Schottky rectifier. Data measured in a 65W power adapter showed a 1% efficiency improvement using LVFR versus planar Schottky.
John Trice, senior director and general manager of ON Semiconductor's Power Discrete Division, said: "As our customers continuously strive to achieve higher efficiencies in their product designs, older planar generations of Schottky rectifiers simply cannot cost effectively deliver the performance and efficiency of the trench LVFR family. LVFR's superior forward voltage drop and reverse leakage performance over extended temperature ranges exceed our customers' demanding specifications for power efficiency improvement."
