Low current spintronics technique developed for high density memory

A technique capable of controlling magnetism at a lower current level than conventional spintronics devices has been developed by the research team of the International center for Materials Nanoarchitectonics (MANA) and Tokyo University of Science

Spintronics devices, which use the charge and spin of electrons to record information, are attracting much attention as a type of memory device. However, spintronics elements are difficult to use in high integration due to their complex structures and they require a high level of write current.

The approach combines a lithium ion conducting solid electrolyte with Fe3O4 a magnetic material, enabling the insertion and removal of ions by applying a voltage. In this way, the research group successfully tuned magnetic properties including magnetoresistance and magnetization.

The technique could enable spintronics devices to control magnetism at a lower current level than conventional devices. It could also allow them to be simpler and more highly integrated. This technique is expected to enable the development of high-density high-capacity memory devices with low power consumption, using conventional semiconductor processes.