‘Best in class’ output power, efficiency and ruggedness, claims Freescale
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Freescale Semiconductor has introduced an rf power LDMOS transistor that it says features the industry's highest output power, efficiency and ruggedness of its kind.
Designed for UHF broadcast television applications, the MRFE6VP8600H is designed to achieve 39% greater output power than its predecessor and to deliver maximum performance for a range of digital transmission standards.
According to Freescale, the transistor delivers 125W of linear power (more than 600W peak envelope power) over the entire broadcast band, with exceptional efficiency (typically 30% at 860MHz and up to 45% when employed in a Doherty configuration).
The UHF frequency band ranges from 470 to 860 MHz and is used by broadcasters to transmit television signals over the air. The vast majority of television stations currently broadcasting in digital are using the UHF band.
The device's design enables a reduction in the total number of transistors and combiner stages needed for a given output power. Freescale adds that a transmitter based on the MRFE6VP8600H can use up to 15% less power than previous generations.
When driven to its full rated rf output power, this device is designed not to degrade in performance when driving an impedance mismatch (VSWR) greater than 65:1, at all phase angles, or when driven by twice its rated input power. It tolerates out of band reflective load conditions caused by highly selective channel filters and high peak to average ratio (PAR) characteristic of digital transmission schemes employing higher order modulation techniques such as DVB-T (8k OFDM). According to Freescale, the enhanced ruggedness characteristics of the device also make it possible to employ simplified transmitter protection circuits.
