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Toshiba expands super junction N-Channel MOSFET series

Toshiba Electronics Europe has introduced eight new super junction N-channel power MOSFETs to strengthen its DTMOSVI series.

The 650V-rated TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z and TK210V65Z devices offer engineers a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (QGD) figure of merit (FoM) when compared to the previous DTMOS generation. As a result, they can raise the efficiency of switch-mode power supplies by approximately 0.36 % - enabling a substantial decrease in switching losses, compared to the previous generation.

These new MOSFETs are targeted for use in the switch-mode power supplies of a broad range of industrial equipment (including data centre infrastructure, back-up power sources and the power conditioners of photovoltaic generators), and allow major performance upgrades when replacing existing devices.

The TK110Z65Z, TK125V65Z, TK170V65Z and TK210V65Z offer a Kelvin source pin for improved control and efficiency increase potential. The TK110N65Z and TK110Z65Z fit into TO-247 packages with 3/4 pin’s, while the TK110A65Z, TK155A65Z and TK190A65Z come in fully isolated TO-220SIS packages.

The TK125V65Z, TK170V65Z and TK210V65Z are all housed in an 8mm x 8mm DFN package format for surface mounting, which means that DTMOSVI solutions can now be sourced whatever the specific board real estate requirements are.


Author
Neil Tyler

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