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Infineon extends EiceDRIVER portfolio

Infineon Technologies broadens its level-shift EiceDRIVER portfolio with a 1200 V three-phase gate driver.

Based on the company’s silicon-on-insulator (SOI) technology the device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These features reduce BOM and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.

The level-shift gate driver 6ED2230 provides 350 mA / 650 mA source and sink drive capability. It prevents shoot-through thanks to the integrated dead time. The integrated over-current protection comparator with a +/-5 percent reference threshold accuracy provides fast, repeatable and reliable switch protection. The integrated bootstrap diodes offer ultra-fast reverse recovery with a very low typical resistance of 40 Ω.

Negative VS transient voltage immunity of -100 V with repeating 700 ns wide pulses supports both improved levels of robustness and reliable operation. The low and high side voltage supplies feature independent under-voltage lockout (UVLO) for safe operation. A unique DSO-24 footprint separates the low and high voltage on opposite sides of the package to further increase clearance and creepage.

Author
Neil Tyler

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